2D Simulations of Kink phenomenon in InAlAs/InGaAs/InP HEMTs

Author

Zhiming Wang ; Xiaobin Luo ; Weihua Yu ; Xin Lv

Author_Institution

Sch. of Inf. & Electron., Beijing Inst. of Technol., Beijing, China

fYear

2013

fDate

25-28 Aug. 2013

Firstpage

320

Lastpage

323

Abstract

In this paper, a two dimensional (2D) device simulation was used to investigate Kink phenomena in InAlAs/InGaAs HEMT´s. Impact ionization was taken into account and it is responsible for the kink. It is found that the accumulation of holes in the gate-source overlap region generated by the impact ionization has the channel electron density increase at the bias point where kink appears. At high drain to source voltage, there is a rapid increase in the drain conductance, and it is known as an on-state breakdown.

Keywords

III-V semiconductors; electric breakdown; electron density; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device models; InAlAs-InGaAs-InP; InAlAs-InGaAs-InP HEMT; channel electron density; drain conductance; gate-source overlap region; impact ionization; kink phenomenon; on-state breakdown; two dimensional device simulation; HEMTs; Impact ionization; Indium gallium arsenide; Logic gates; MODFETs; Semiconductor process modeling; Breakdown; HEMTs; Impact ionization; Kink phenomenon; Simulations;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Technology & Computational Electromagnetics (ICMTCE), 2013 IEEE International Conference on

Conference_Location

Qingdao

Type

conf

DOI

10.1109/ICMTCE.2013.6812445

Filename

6812445