Title :
2D Simulations of Kink phenomenon in InAlAs/InGaAs/InP HEMTs
Author :
Zhiming Wang ; Xiaobin Luo ; Weihua Yu ; Xin Lv
Author_Institution :
Sch. of Inf. & Electron., Beijing Inst. of Technol., Beijing, China
Abstract :
In this paper, a two dimensional (2D) device simulation was used to investigate Kink phenomena in InAlAs/InGaAs HEMT´s. Impact ionization was taken into account and it is responsible for the kink. It is found that the accumulation of holes in the gate-source overlap region generated by the impact ionization has the channel electron density increase at the bias point where kink appears. At high drain to source voltage, there is a rapid increase in the drain conductance, and it is known as an on-state breakdown.
Keywords :
III-V semiconductors; electric breakdown; electron density; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device models; InAlAs-InGaAs-InP; InAlAs-InGaAs-InP HEMT; channel electron density; drain conductance; gate-source overlap region; impact ionization; kink phenomenon; on-state breakdown; two dimensional device simulation; HEMTs; Impact ionization; Indium gallium arsenide; Logic gates; MODFETs; Semiconductor process modeling; Breakdown; HEMTs; Impact ionization; Kink phenomenon; Simulations;
Conference_Titel :
Microwave Technology & Computational Electromagnetics (ICMTCE), 2013 IEEE International Conference on
Conference_Location :
Qingdao
DOI :
10.1109/ICMTCE.2013.6812445
