Title :
Design of a 200GHz sub-harmonic mixer with planar Schottky diodes
Author :
Chengcheng Wan ; Tong fei ; Ling Chen ; Weihua Yu ; Xin Lv
Author_Institution :
Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China
Abstract :
This paper presents the design and simulation results of a novel 200 GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAs Schottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5 dB was achieved with 6 mW of LO power. Over an RF band of 183-220 GHz, the double sideband mixer conversion loss is below 15 dB.
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; millimetre wave filters; millimetre wave mixers; quartz; GaAs; GaAs Schottky diodes; IF filter; SiO2; anti-parallel pair; bandwidth 183 GHz to 220 GHz; double sideband mixer; loss 10.5 dB; planar Schottky diodes; power 6 mW; sub-harmonic mixer; suspended quartz; GaAsSchottky diodes; sub-harmonic mixer; suspended quartz microstrip circuits;
Conference_Titel :
Microwave Technology & Computational Electromagnetics (ICMTCE), 2013 IEEE International Conference on
Conference_Location :
Qingdao
DOI :
10.1109/ICMTCE.2013.6812446
