DocumentCode
2072910
Title
The theoretical estimation of the second-order gauge factors of polycristalline silicon
Author
Sarina, M.P. ; Gridchin, V.A.
Author_Institution
Novosibirsk State Tech. Univ., Russia
Volume
1
fYear
2001
fDate
26 Jun-3 Jul 2001
Firstpage
169
Abstract
Nonlinear gauge factors for p-type polycrystalline silicon were theoretically estimated for <100>, <110> and <111> film textures. The obtained results are discussed in the application of the reducing of nonlinear output signal of the pressure sensor with the bridge circuit
Keywords
bridge circuits; elemental semiconductors; piezoresistive devices; pressure sensors; semiconductor thin films; silicon; Si; bridge circuit; film texture; nonlinear gauge factor; piezoresistance effect; polycrystalline silicon; pressure sensor; Capacitive sensors; Estimation theory; Grain boundaries; Piezoresistance; Resistors; Semiconductor films; Semiconductor materials; Silicon; Substrates; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Science and Technology, 2001. KORUS '01. Proceedings. The Fifth Russian-Korean International Symposium on
Conference_Location
Tomsk
Print_ISBN
0-7803-7008-2
Type
conf
DOI
10.1109/KORUS.2001.975089
Filename
975089
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