Title :
The theoretical estimation of the second-order gauge factors of polycristalline silicon
Author :
Sarina, M.P. ; Gridchin, V.A.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fDate :
26 Jun-3 Jul 2001
Abstract :
Nonlinear gauge factors for p-type polycrystalline silicon were theoretically estimated for <100>, <110> and <111> film textures. The obtained results are discussed in the application of the reducing of nonlinear output signal of the pressure sensor with the bridge circuit
Keywords :
bridge circuits; elemental semiconductors; piezoresistive devices; pressure sensors; semiconductor thin films; silicon; Si; bridge circuit; film texture; nonlinear gauge factor; piezoresistance effect; polycrystalline silicon; pressure sensor; Capacitive sensors; Estimation theory; Grain boundaries; Piezoresistance; Resistors; Semiconductor films; Semiconductor materials; Silicon; Substrates; Tensile stress;
Conference_Titel :
Science and Technology, 2001. KORUS '01. Proceedings. The Fifth Russian-Korean International Symposium on
Conference_Location :
Tomsk
Print_ISBN :
0-7803-7008-2
DOI :
10.1109/KORUS.2001.975089
