New nano-electronic memory using multi-level logic principle

In this paper a novel digital, logic level design principle, suitable for nano-electronic circuits, is proposed. The proposed design has the potential to increase storage capacity of memory by two fold without increase in the number of bits needed. Current-Voltage (I-V) characteristic of benzene ring molecule provides the scope of applying tri-stable logic principle using benzene ring molecule as special switching device. This principle will offer the option to store negative numbers in memory or registers without need of special sign bit and without need of a special coding scheme. These memory cells also can be used in the elementary binary digital logic blocks like AND, OR, etc. and elementary computational blocks like ADD and SUBTRACT units using benzene molecules as basic tri-stable switching device and resistors in combination. It is expected that higher magnitude of current will be observed in the larger molecules for same voltage swing without major change in the qualitative behavior and hence the basic design scheme will produce better devices as larger molecules with similar characteristics are synthesized.