Title :
Influence of plasma processing on properties of metal thin-film and foil resistors
Author :
Berkin, A.B. ; Sokolov, Y.V.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fDate :
26 Jun-3 Jul 2001
Abstract :
The influence of plasma processing on the stability of parameters of film and foil resistors is investigated. It is shown that the stabilization occurs due to fixing of the grain borders of the resistor material. The process overlap of plasma processing with that of drawing of a protective oxide film allows expansion of the working temperature range of the resistors up to 570 K
Keywords :
electron device testing; foils; grain boundaries; oxidation; plasma materials processing; protective coatings; stability; surface treatment; thin film resistors; 570 K; foil resistors; grain border fixing; metal thin-film resistors; plasma processing; process overlap; resistor material; resistor parameter stability; working temperature range; Atomic layer deposition; Atomic measurements; Oxidation; Plasma materials processing; Plasma properties; Plasma stability; Plasma temperature; Resistors; Substrates; Transistors;
Conference_Titel :
Science and Technology, 2001. KORUS '01. Proceedings. The Fifth Russian-Korean International Symposium on
Conference_Location :
Tomsk
Print_ISBN :
0-7803-7008-2
DOI :
10.1109/KORUS.2001.975093
