Title :
Two-Terminal Devices in Millimeter-Wave Range: Physical Analysis and Future Trends
Author :
Rolland, P.A. ; Friscourt, M.R. ; Dalle, C. ; Lippens, D. ; Haese, N.
Abstract :
This paper reviews the advance made in the perfomance of millimeter-wave two-terminal devices, mainly Gunn, IMPATT and resonant-tunneling diodes, on the basis of the semiconductor material systems used (Si, GaAs, InP).
Keywords :
Cathodes; Electrons; Frequency; Gallium arsenide; Gunn devices; Indium phosphide; Power generation; Resonant tunneling devices; Semiconductor diodes; Solid state circuits;
Conference_Titel :
Microwave Conference, 1990. 20th European
Conference_Location :
Budapest, Hungary
DOI :
10.1109/EUMA.1990.336168
