• DocumentCode
    2073105
  • Title

    Variability-aware memory management for nanoscale computing

  • Author

    Dutt, Nikil ; Gupta, Puneet ; Nicolau, A. ; Bathen, L.A.D. ; Gottscho, M.

  • Author_Institution
    Dept. of Comput. Sci., Univ. of California, Irvine, Irvine, CA, USA
  • fYear
    2013
  • fDate
    22-25 Jan. 2013
  • Firstpage
    125
  • Lastpage
    132
  • Abstract
    As the semiconductor industry continues to push the limits of sub-micron technology, the ITRS expects hardware (e.g., die-to-die, wafer-to-wafer, and chip-to-chip) variations to continue increasing over the next few decades. As a result, it is imperative for designers to build variation-aware software stacks that may adapt and opportunistically exploit said variations to increase system performance/responsiveness as well as minimize power consumption. The memory subsystem is one of the largest components in today´s computing system, a main contributor to the overall power consumption of the system, and therefore one of the most vulnerable components to the effects of variations (e.g., power). This paper discusses the concept of variability-aware memory management for nanoscale computing systems. We show how to opportunistically exploit the hardware variations in on-chip and off-chip memory at the system level through the deployment of variation-aware software stacks.
  • Keywords
    nanoelectronics; power aware computing; storage management; ITRS; International Technology Roadmap for Semiconductors; hardware variations; memory subsystem; nanoscale computing systems; off-chip memory; on-chip memory; power consumption; semiconductor industry; system performance; system responsiveness; variability-aware memory management; variation-aware software stacks; Hardware; Memory management; Power demand; Random access memory; Resource management; Software; System-on-chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (ASP-DAC), 2013 18th Asia and South Pacific
  • Conference_Location
    Yokohama
  • ISSN
    2153-6961
  • Print_ISBN
    978-1-4673-3029-9
  • Type

    conf

  • DOI
    10.1109/ASPDAC.2013.6509584
  • Filename
    6509584