Title :
S-band low noise amplifier for TT&C receiver in LEO satellites
Author :
Siddiqui, Muhammed Adnan
Abstract :
This paper describes the design, simulation and measurements of a 2025 to 2120 MHz single stage Pseudomorphic High Electron Mobility Transistor (pHEMT) Low Noise Amplifier (LNA), intended for use in a TT&C receiver in low Earth orbit (LEO) satellite. The LNA has been simulated with software and the results show that it provides a gain of more than 10 dB, a noise figure below 0.58 dB and VSWR less than 1:1.35. The circuit is designed on Roger´s Duroid 5880 microwave laminate. The power consumption is 27 mW at VDD=12 V.
Keywords :
HEMT circuits; UHF circuits; low noise amplifiers; radio receivers; satellite communication; 12 V; 2025 to 2120 MHz; 27 mW; LEO satellites; S-band low noise amplifier; TT&C receiver; low Earth orbit satellite; power consumption; single stage pseudomorphic high electron mobility transistor LNA; Circuit noise; Circuit simulation; Electron mobility; Extraterrestrial measurements; HEMTs; Low earth orbit satellites; Low-noise amplifiers; MODFETs; Noise measurement; PHEMTs;
Conference_Titel :
Recent Advances in Space Technologies, 2005. RAST 2005. Proceedings of 2nd International Conference on
Print_ISBN :
0-7803-8977-8
DOI :
10.1109/RAST.2005.1512605
