MOS structure charge state relaxation in the high electric fields

The investigation of charge state change of MOS structure after the injection of charges of different values was carried out in this study using the controlled current stress technique. The following structure charge state relaxation was studied. The new technique of investigation of MOS structures charge state after the high-field stress was proposed. This stress is based on the controlled current stress, applied to the sample, allowing directly after injection to monitor the structure charge state without sample re-switching in wide range of electric fields of different polarities, from the injection field to the structure short circuit. The technique approbation during the investigation of MOS structures with thermal silicon dioxide after injection of charge of different values had been carried out. It was found out that relaxation time of positive charge, created by tunnel injection of electrons from silicon in thermal SiO₂ film, had field dependence, decreasing with external field rise