• DocumentCode
    2073323
  • Title

    Microwave High-Power GaAs FET Amplifiers

  • Author

    Mitsui, Y.

  • Author_Institution
    Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
  • Volume
    1
  • fYear
    1990
  • fDate
    9-13 Sept. 1990
  • Firstpage
    133
  • Lastpage
    141
  • Abstract
    Solid-state power amplifiers(SSPAs) have-been significantly improving in the past years and gradually replacing travelling wave tube amplifiers (TWTAs) in the area of microwave and mm-wave communication systems such as terrestrial communications equipment and satellite transponders. This paper surveys the recent research and developmental activities on solid state power amplifiers and related key devices in Japan, focussing on device structures, circuit approaches and processing technologies.
  • Keywords
    Artificial satellites; Communication equipment; Gallium arsenide; High power amplifiers; Microwave FETs; Microwave amplifiers; Microwave devices; Power amplifiers; Solid state circuits; Transponders;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1990. 20th European
  • Conference_Location
    Budapest, Hungary
  • Type

    conf

  • DOI
    10.1109/EUMA.1990.336177
  • Filename
    4135991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2073323