Title :
Microwave High-Power GaAs FET Amplifiers
Author_Institution :
Optoelectronic and Microwave Devices R & D Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
Abstract :
Solid-state power amplifiers(SSPAs) have-been significantly improving in the past years and gradually replacing travelling wave tube amplifiers (TWTAs) in the area of microwave and mm-wave communication systems such as terrestrial communications equipment and satellite transponders. This paper surveys the recent research and developmental activities on solid state power amplifiers and related key devices in Japan, focussing on device structures, circuit approaches and processing technologies.
Keywords :
Artificial satellites; Communication equipment; Gallium arsenide; High power amplifiers; Microwave FETs; Microwave amplifiers; Microwave devices; Power amplifiers; Solid state circuits; Transponders;
Conference_Titel :
Microwave Conference, 1990. 20th European
Conference_Location :
Budapest, Hungary
DOI :
10.1109/EUMA.1990.336177
