Electrothermal characterization of TFTs under the impact of an EMP

This paper is focused on electrothermal characterization of n-channel polysilicon thin-film transistors (TFTs) under the impact of an EMP. The mathematical treatment is based on hybrid time-domain finite element method (FEM), in which non-linear temperature-dependent characteristics of electrical conductivity and thermal conductivity of all materials involved are treated appropriately, and therefore, the time-dependent electronic field, current density, and temperature rise in TFTs are captured successfully and compared for different cases.