• DocumentCode
    2073437
  • Title

    Use of the finite element method for the modeling of multi-layered power/ground planes with small features

  • Author

    Bharath, Krishna ; Choi, Jae Young ; Swaminathan, Madhavan

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
  • fYear
    2009
  • fDate
    26-29 May 2009
  • Firstpage
    1630
  • Lastpage
    1635
  • Abstract
    In this paper, a novel formulation for the modeling of multi-layer package power/ground planes has been proposed. The formulation is developed by first applying the finite element method (FEM) for a single plane-pair geometry, from which a SPICE-compatible equivalent circuit is extracted. Next, the admittance matrices obtained for individual plane-pairs are coupled together, to extend the technique, and to enable the modeling of multiple plane-pairs. This method, the mutli-layer finite element method (MFEM), uses an adaptive triangular mesh. This enables MFEM to capture the effects of small geometrical features that can affect the frequency response, with only a modest increase in computational cost as compared to methods that use regular square meshes. MFEM is able to correctly model the effect of apertures or voids in the planes, which cause vertical coupling of energy. Several examples have been shown to illustrate the efficacy of the method for both single and multiple plane-pair geometries.
  • Keywords
    SPICE; equivalent circuits; mesh generation; multichip modules; SPICE-compatible equivalent circuit; adaptive triangular mesh; admittance matrices; finite element method; multilayered power-ground planes; plane-pair geometry; voids; Admittance; Apertures; Computational efficiency; Electromagnetic interference; Finite difference methods; Finite element methods; Geometry; Packaging; Power supplies; Voltage fluctuations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-4475-5
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2009.5074233
  • Filename
    5074233