Self-assembled single wall carbon nanotube field effect transistors

Author

Marty, L. ; Naud, C. ; Chaumont, M. ; Bonnot, A.M. ; Fournier, T. ; Bouchiat, V.

Author_Institution

LEPES, CNRS, Grenoble, France

Volume

1

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

240

Abstract

We report detailed characterization of in-situ wired single wall carbon nanotube (SWNT) field effect transistors (FETs). They were batch processed using a single step technique based on hot filament chemical vapor deposition. Raw samples show an ambipolar field effect. The temperature dependence of the gain confirms the presence of Schottky barriers at the nanotube/metal interface. Moreover the gate dependence exhibits hysteresis at any temperature due to extraction and trapping of charges. Below 30 K, Coulomb blockade occurs at low drain-source bias and partially washes out the influence of the Schottky barriers.

Keywords

Coulomb blockade; Schottky barriers; carbon nanotubes; chemical vapour deposition; field effect transistors; metal-insulator boundaries; nanotechnology; nanotube devices; self-assembly; 30 K; C; Coulomb blockade; FET; SWNT; Schottky barriers; ambipolar field effect; charge trapping; drain source bias; electric hysteresis; gate dependence; hot filament chemical vapor deposition; nanotube/metal interface; single wall carbon nanotube field effect transistors; CNTFETs; Carbon nanotubes; Chemical vapor deposition; Electrodes; FETs; Hydrogen; MOSFETs; Nanobioscience; Schottky barriers; Self-assembly;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1231760

Filename

1231760