• DocumentCode
    2073553
  • Title

    Modeling of carbon nanotube Schottky barrier reduction for holes in air

  • Author

    Yamada, Toshishige

  • Author_Institution
    NASA Ames Res. Center, Moffett Field, CA, USA
  • Volume
    1
  • fYear
    2003
  • fDate
    12-14 Aug. 2003
  • Firstpage
    244
  • Abstract
    A model is proposed for the previously reported lower Schottky barrier for holes ΦBh in air than in vacuum at a metallic electrode-semiconducting carbon nanotube (CNT) junction. We consider that there is a transition region between the electrode and the CNT, and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules on the CNT, leading to lower ΦBh after oxidation. The mechanism prevails in both p- and n-CNTs, and the model consistently explains the key experimental findings.
  • Keywords
    Schottky barriers; carbon nanotubes; metal-insulator transition; oxidation; semiconductor materials; semiconductor-metal boundaries; C; carbon nanotube Schottky barrier reduction; electrode; holes; metallic electrode semiconducting carbon nanotube junction; oxidation; oxygen molecules; potential drop; Carbon nanotubes; Charge carrier processes; Electrodes; FETs; Gold; NASA; Oxidation; Schottky barriers; Semiconductivity; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
  • Print_ISBN
    0-7803-7976-4
  • Type

    conf

  • DOI
    10.1109/NANO.2003.1231761
  • Filename
    1231761