Title :
Modeling of carbon nanotube Schottky barrier reduction for holes in air
Author :
Yamada, Toshishige
Author_Institution :
NASA Ames Res. Center, Moffett Field, CA, USA
Abstract :
A model is proposed for the previously reported lower Schottky barrier for holes ΦBh in air than in vacuum at a metallic electrode-semiconducting carbon nanotube (CNT) junction. We consider that there is a transition region between the electrode and the CNT, and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules on the CNT, leading to lower ΦBh after oxidation. The mechanism prevails in both p- and n-CNTs, and the model consistently explains the key experimental findings.
Keywords :
Schottky barriers; carbon nanotubes; metal-insulator transition; oxidation; semiconductor materials; semiconductor-metal boundaries; C; carbon nanotube Schottky barrier reduction; electrode; holes; metallic electrode semiconducting carbon nanotube junction; oxidation; oxygen molecules; potential drop; Carbon nanotubes; Charge carrier processes; Electrodes; FETs; Gold; NASA; Oxidation; Schottky barriers; Semiconductivity; Thermoelectricity;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231761
