Title :
Fast simulated diffusion: an optimization algorithm for multi-minimum problems and its application to MOSFET model parameter extraction
Author :
Sakurai, Takayasu ; Ichida, Makoto ; Newton, A. Richard
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A novel algorithm, fast simulated diffusion (FSD), is proposed to solve a multiminimal optimization problem on multidimensional continuous space. The algorithm performs a greedy search and a random search alternately and can find a global minimum with a practical success rate. An efficient hill-decending method for the greedy search is proposed. When the FSD is applied to a set of standard test functions, it shows an order-of-magnitude faster speed than the conventional simulated diffusion. An application of the FSD to a MOSFET parameter extraction problem is described
Keywords :
digital simulation; electronic engineering computing; insulated gate field effect transistors; optimisation; semiconductor device models; MOSFET model; fast simulated diffusion; global minimum; greedy search; hill-decending method; multi-minimum problems; multidimensional continuous space; multiminimal optimization problem; optimization algorithm; parameter extraction; random search; Differential equations; MOSFET circuits; Minimization methods; Optimization methods; Parameter extraction; Semiconductor devices; Simulated annealing; Temperature; Testing; Very large scale integration;
Conference_Titel :
Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0015-7
DOI :
10.1109/CICC.1991.164047
