Fast simulated diffusion: an optimization algorithm for multi-minimum problems and its application to MOSFET model parameter extraction

Author

Sakurai, Takayasu ; Ichida, Makoto ; Newton, A. Richard

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1991

fDate

12-15 May 1991

Abstract

A novel algorithm, fast simulated diffusion (FSD), is proposed to solve a multiminimal optimization problem on multidimensional continuous space. The algorithm performs a greedy search and a random search alternately and can find a global minimum with a practical success rate. An efficient hill-decending method for the greedy search is proposed. When the FSD is applied to a set of standard test functions, it shows an order-of-magnitude faster speed than the conventional simulated diffusion. An application of the FSD to a MOSFET parameter extraction problem is described

Keywords

digital simulation; electronic engineering computing; insulated gate field effect transistors; optimisation; semiconductor device models; MOSFET model; fast simulated diffusion; global minimum; greedy search; hill-decending method; multi-minimum problems; multidimensional continuous space; multiminimal optimization problem; optimization algorithm; parameter extraction; random search; Differential equations; MOSFET circuits; Minimization methods; Optimization methods; Parameter extraction; Semiconductor devices; Simulated annealing; Temperature; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0015-7

Type

conf

DOI

10.1109/CICC.1991.164047

Filename

164047