DocumentCode :
2073939
Title :
Study of HgCdTe anodic oxides by Rutherford backscattering method
Author :
Lanskaya, Olga ; Lilenko, Elena
Author_Institution :
Opt. Monitoring Inst., Acad. of Sci., Tomsk, Russia
Volume :
1
fYear :
2001
fDate :
26 Jun-3 Jul 2001
Firstpage :
306
Abstract :
The surface passivation Hg1-xCdxTe (x-0.2) with n-type and p-type conductivity was investigated. The composition of anodic oxide MCT has been studied using RBS ions helium. The monitoring changes in depth profiles indicates that oxides grown in equal conditions on n-type an p-type MCT are different in composition
Keywords :
II-VI semiconductors; Rutherford backscattering; anodised layers; cadmium compounds; mercury compounds; passivation; surface treatment; Hg1-xCdxTe; HgCdTe; RBS; Rutherford backscattering method; anodic oxides; depth profiles; surface passivation; Backscatter; Chemicals; Conductivity; Current density; Detectors; Etching; Mercury (metals); Passivation; Tellurium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Science and Technology, 2001. KORUS '01. Proceedings. The Fifth Russian-Korean International Symposium on
Conference_Location :
Tomsk
Print_ISBN :
0-7803-7008-2
Type :
conf
DOI :
10.1109/KORUS.2001.975132
Filename :
975132
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2073939
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