Title :
C-Band High Efficiency GaAs FET Amplifier with 17.4W Output Power
Author :
Ikeda, Yukio ; Takagi, Tadashi ; Igi, Sigeo ; Hirose, Haruzo ; Urasaki, Syuji
Author_Institution :
Mitsubishi Electric Corporation, Electro-Optics and Microwave Systems Laboratory, 5-1-1 Ofuna, Kamakura-city, Kanagawa prefecture 247 JAPAN
Abstract :
C-band high efficiency GaAs FET amplifier has been developed for space-craft applications. Power added efficiency 48% is obtained with output power 17.4W and linear gain 11.6dB over 3.7~4.2GHz. This amplifier consists of 4 FET chips and each output power is combined by power combiner matched by 2-stage impedance transformer. This amplifier is designed using measured parameters of fabricated FET chip and these parameters are confirmed by harmonic balance simulation.
Keywords :
Gain; Gallium arsenide; High power amplifiers; Impedance; Microwave FETs; Microwave amplifiers; Power amplifiers; Power combiners; Power generation; Semiconductor device measurement;
Conference_Titel :
Microwave Conference, 1990. 20th European
Conference_Location :
Budapest, Hungary
DOI :
10.1109/EUMA.1990.336060
