Title :
2.5D design methodology
Author_Institution :
R & D Dept. 2, Semicond. Technol. Acad. Res. Center, Yokohama, Japan
Abstract :
We present the new issues of initiating fusion of LSI technology with package technology using 2.5D design methodology. Especially, very important issue is a high frequency insertion loss on the silicon interposer. There are two wiring methodologies on the silicon interposer. One is the Manhattan wiring method like as LSI wiring design and the other is the transmission channel wiring method like as package design. We have confirmed that the transmission channel wiring is twice better electro characteristic than the Manhattan wiring using a component model that is 6mm length at 1 GHz.
Keywords :
elemental semiconductors; integrated circuit design; large scale integration; silicon; wiring; 2.5D design methodology; LSI technology; frequency 1 GHz; high frequency insertion loss; package technology; silicon interposer; size 6 mm; transmission channel wiring method; wiring methodologies; Design methodology; Large scale integration; Silicon; System-on-chip; Three-dimensional displays; Through-silicon vias; Wiring;
Conference_Titel :
Design Automation Conference (ASP-DAC), 2013 18th Asia and South Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4673-3029-9
DOI :
10.1109/ASPDAC.2013.6509629
