DocumentCode
2074342
Title
2.5D design methodology
Author
Tokunaga, Seiki
Author_Institution
R & D Dept. 2, Semicond. Technol. Acad. Res. Center, Yokohama, Japan
fYear
2013
fDate
22-25 Jan. 2013
Firstpage
399
Lastpage
402
Abstract
We present the new issues of initiating fusion of LSI technology with package technology using 2.5D design methodology. Especially, very important issue is a high frequency insertion loss on the silicon interposer. There are two wiring methodologies on the silicon interposer. One is the Manhattan wiring method like as LSI wiring design and the other is the transmission channel wiring method like as package design. We have confirmed that the transmission channel wiring is twice better electro characteristic than the Manhattan wiring using a component model that is 6mm length at 1 GHz.
Keywords
elemental semiconductors; integrated circuit design; large scale integration; silicon; wiring; 2.5D design methodology; LSI technology; frequency 1 GHz; high frequency insertion loss; package technology; silicon interposer; size 6 mm; transmission channel wiring method; wiring methodologies; Design methodology; Large scale integration; Silicon; System-on-chip; Three-dimensional displays; Through-silicon vias; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (ASP-DAC), 2013 18th Asia and South Pacific
Conference_Location
Yokohama
ISSN
2153-6961
Print_ISBN
978-1-4673-3029-9
Type
conf
DOI
10.1109/ASPDAC.2013.6509629
Filename
6509629
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