Title :
Unique properties of quantum dot lasers
Author :
Ledentsov, N.N. ; Kovsh, A.R. ; Ouyang, D. ; Zhukov, A.E. ; Ustinov, V.M. ; Maximov, M.V. ; Shernyakov, Yu.M. ; Kryzhanovskaya, N.V. ; Kaiander, I.N. ; Sellin, R. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Technische Univ. Berlin, Germany
Abstract :
Quantum dot (QD) lasers on GaAs substrates demonstrate parameters improved over quantum well-based devices and operate in an extended wavelength range. Pseudomorphic 1.3 μm InAs-GaAs QD lasers demonstrate low threshold current density (Jth300 K<100 A/cm2), high differential efficiency (ηdiff>80%), and low losses (α<1.5 cm-1) - all realized in the same device. Characteristic temperature for the threshold current is ∼170 K up to 70°C. Reduced linewidth enhancement factor is advantageous for low-chirp operation and makes it possible to suppress completely beam filamentation up to stripe widths ∼100 μm. GaAs-based 1.31 μm QD vertical-cavity surface-emitting lasers (VCSELs) with 8 μm oxide aperture emit up to 1.2 mW continuous wave (CW) optical power. First 1.5 μm QD lasers on GaAs substrates with high quantum efficiency (ηi>60-70%) and low losses (α<3-4 cm-1) are fabricated.
Keywords :
III-V semiconductors; current density; gallium arsenide; quantum dot lasers; quantum well lasers; surface emitting lasers; 1.2 mW; 1.3 micron; 1.31 micron; 1.5 micron; 100 micron; 170 K to 70 degC; 8 micron; GaAs substrates; InAs-GaAs; InAs-GaAs QD lasers; QD vertical cavity surface emitting lasers; VCSELs; optical power; oxide aperture; quantum dot lasers properties; quantum efficiency; quantum well based devices; threshold current density; Gallium arsenide; Laser beams; Quantum dot lasers; Quantum well lasers; Surface emitting lasers; Surface waves; Temperature; Threshold current; Time of arrival estimation; Vertical cavity surface emitting lasers;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231792
