Title :
InAs quantum dot lasers on InP substrate
Author :
Qiu, Yueming ; Uhl, David ; Chacon, Rebecca ; Yang, Rui Q.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Single-stack InAs self-assembled quantum dot (QD) lasers based on InP substrates have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers based up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with emission wavelengths between 1.59 to 1.74 μm. Above 200 K, a very low wavelength temperature sensitivity of 0.09 nm/K was obtained, which is as low as that caused by the refractive index change.
Keywords :
III-V semiconductors; MOCVD coatings; indium compounds; quantum dot lasers; refractive index; self-assembly; semiconductor epitaxial layers; semiconductor quantum dots; sensitivity; waveguide lasers; 1.59 to 1.74 micron; 260 K; 293 to 298 K; InAs; InAs quantum dot lasers; InP; InP substrate; emission wavelengths; metalorganic vapor phase epitaxy; pulsed mode; refractive index; room temperature; self assembled quantum dot lasers; sensitivity; waveguide lasers; Gallium arsenide; Gas lasers; Indium gallium arsenide; Indium phosphide; Laser modes; Quantum dot lasers; Substrates; Temperature sensors; US Department of Transportation; Waveguide lasers;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231793
