Fabrication and photoluminescent properties of ZnO/ZnMgO quantum structure nanorods

Author

Park, W.I. ; Yi, G.-C.

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., South Korea

Volume

1

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

368

Abstract

We report the epitaxial growth of ZnO/ZnMgO nanorod quantum structures and their structural and photoluminescent characteristics. The nanorod quantum structures grown using low pressure, metal-organic vapor phase epitaxy (MOVPE), exhibit uniform width and length distributions. Typical diameters and lengths of nanorods were in the range of 20-70 nm and 0.5-2 μm. During the nanorod growth, ZnO/ZnMgO superlattices with their periodic thicknesses of 46-145 Å were fabricated by depositing ZnO and ZnMgO layers alternatively. Furthermore, quantum confinement of carriers in the superlattice nanorods was observed using photoluminescence (PL) spectroscopy.

Keywords

II-VI semiconductors; MOCVD; magnesium compounds; nanostructured materials; nanotechnology; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; vapour phase epitaxial growth; zinc compounds; 0.5 to 2 micron; 20 to 70 nm; 46 to 145 Å; MOVPE; PL spectroscopy; ZnO-ZnMgO; ZnO/ZnMgO epitaxial growth; ZnO/ZnMgO quantum structure nanorods; ZnO/ZnMgO superlattices; metal organic vapor phase epitaxy; nanorod growth; photoluminescence properties; photoluminescence spectroscopy; quantum confinement; superlattice nanorods; Epitaxial growth; Epitaxial layers; Fabrication; Materials science and technology; Nanoscale devices; Nanostructures; Nanowires; Potential well; Superlattices; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1231794

Filename

1231794