High-power ion beam sources for semiconductor technologies

In this report two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP units. They generate ion beams with ion energies of up-to 500 keV; pulse duration is 20-200 and 50 ns-respectively. There are two operations modes to which MUK and TEMP are designated respectively. The first one is heavy ion implantation, beam parameters are as follows: beam composition can be varied from a range, of H⁺, Cⁿ⁺, Alⁿ⁺, Mgⁿ⁺, Feⁿ⁺, Wⁿ⁺, etc.; current density from 1 to 20 A cm^-2 per pulse; total energy flux up to 20 J. The second one which is used mainly for energetic influence applications has the following parameters: beam composition is mixed H⁺ and Cⁿ⁺ ions; current density 40-200 A cm^-2 per pulse; total energy flux 0.3-0.5 kJ. The sources can be provided with various diode systems. They can be applied in material research and semiconductor technology