Title :
Modeling of diode oscillators with field-emission cathodes
Author :
Kurayev, A.A. ; Lukashevich, D.V. ; Sinitsyn, A.K.
Author_Institution :
Dept. of Inf. & Radioelectron., Byelorussian State Univ., Minsk, Byelorussia
Abstract :
The successes of modern electronic technologies of making the integral schemes have allowed us to make field-emission cathodes (F-ECs) containing more than 5000 tips with radius up to 500/spl Aring/ and packing density of 6.4.10/sup 5/ tips/cm/sup 2/. Such thin-film cathodes allow us to get the current up to 1OOmA and the current density of 12A/cm/sup 2/ at the voltage on the controlling grid of 50-100V. On base of the cathodes with such features can be offered efficient microvacuum microwave oscillators and amplifiers. Particularly perspective is the using of the mechanism to oscillations of electromagnetic waves (EMW) on base of electrostatic electronic flow (EF) controlling which will be realized in diode structures (diode, monotron). The given structures at microvacuum technologies are most simple (have a minimum quantity of every probable details, small number of electrodes, simple geometry). In the present work the results of computer modeling and optimization of oscillations processes of EMV in diode structures with F-ECs and the recommendations for probable parameters of made designs are given.
Keywords :
microwave amplifiers; microwave diodes; microwave oscillators; vacuum microelectronics; current density; diode oscillators; diode structures; electrostatic electronic flow; field-emission cathodes; microvacuum microwave amplifiers; microvacuum microwave oscillators; thin-film cathodes; Cathodes; Current density; Diodes; Electrodes; Electromagnetic scattering; Electrostatics; Microwave amplifiers; Microwave oscillators; Transistors; Voltage control;
Conference_Titel :
Vacuum Electronics Conference, 2000. Abstracts. International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5987-9
DOI :
10.1109/OVE:EC.2000.847445