DocumentCode
2074524
Title
Accurate two-step measurement-based parasitic capacitance extraction for high speed memory interface
Author
Shin, Jaemin ; Kwon, Chang-Ki ; Zhang, Xiaonan ; Michalka, Timothy
Author_Institution
QUALCOMM Inc., San Diego, CA
fYear
2009
fDate
26-29 May 2009
Firstpage
1865
Lastpage
1870
Abstract
Accurate estimation of parasitic capacitance at a high speed IO pad is important for memory driver and memory bus designs. A measurement based method is, in general, more accurate than analytical estimates and simulation. A common method is the JEDEC procedure using a vector network analyzer [1]. This paper proposes an improved method, based on a two step measurement process to extract accurate parasitic capacitance. The method has been demonstrated at different process variation points. Moreover, the paper discusses the error in effective capacitance due to on-die bypass capacitance and power bus resistance.
Keywords
capacitance measurement; high-speed integrated circuits; integrated memory circuits; high speed IO pad; high speed memory interface; memory bus designs; memory driver; on-die bypass capacitance; parasitic capacitance extraction; power bus resistance; two step measurement process; Capacitance measurement; Parasitic capacitance; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4244-4475-5
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2009.5074274
Filename
5074274
Link To Document