DocumentCode :
2074524
Title :
Accurate two-step measurement-based parasitic capacitance extraction for high speed memory interface
Author :
Shin, Jaemin ; Kwon, Chang-Ki ; Zhang, Xiaonan ; Michalka, Timothy
Author_Institution :
QUALCOMM Inc., San Diego, CA
fYear :
2009
fDate :
26-29 May 2009
Firstpage :
1865
Lastpage :
1870
Abstract :
Accurate estimation of parasitic capacitance at a high speed IO pad is important for memory driver and memory bus designs. A measurement based method is, in general, more accurate than analytical estimates and simulation. A common method is the JEDEC procedure using a vector network analyzer [1]. This paper proposes an improved method, based on a two step measurement process to extract accurate parasitic capacitance. The method has been demonstrated at different process variation points. Moreover, the paper discusses the error in effective capacitance due to on-die bypass capacitance and power bus resistance.
Keywords :
capacitance measurement; high-speed integrated circuits; integrated memory circuits; high speed IO pad; high speed memory interface; memory bus designs; memory driver; on-die bypass capacitance; parasitic capacitance extraction; power bus resistance; two step measurement process; Capacitance measurement; Parasitic capacitance; Velocity measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4244-4475-5
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2009.5074274
Filename :
5074274
Link To Document :
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