Field-plated high gain lateral bipolar transistor in standard CMOS process for BiNMOS application

Author

Au, Ken K. ; Tsui, Paul G Y ; Kim, Yeong Seuk ; Diogu, Kalu K. ; Kosty, Miranda L. ; Palmer, Charles M.

Author_Institution

Motorola Inc., Austin, TX, USA

fYear

1991

fDate

12-15 May 1991

Abstract

A high-gain gate-assisted lateral bipolar n-p-n transistor with current gain of over 3000 was fabricated in a compatible p-well CMOS process. The device was fabricated using the same mask sequences as that of an n-channel MOSFET with its gate connected to the p-well. With the assistance of the PISCES device simulator, total collector current was found to have two main components, the gale-assisted component and the bulk bipolar component. A circuit model with parallel MOSFET and bipolar transistors was used to verify DC measurement results

Keywords

BIMOS integrated circuits; bipolar transistors; equivalent circuits; integrated circuit technology; semiconductor device models; BiNMOS application; PISCES device simulator; bulk bipolar component; circuit model; collector current; compatible p-well CMOS process; field plated device; gale-assisted component; gate assisted device; high gain; lateral bipolar transistor; standard CMOS process; BiCMOS integrated circuits; Bipolar transistors; CMOS integrated circuits; CMOS process; CMOS technology; Circuit simulation; Cutoff frequency; Gold; Lithography; MOSFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0015-7

Type

conf

DOI

10.1109/CICC.1991.164050

Filename

164050