DocumentCode
2074666
Title
A comparison among three-level ZVS-PWM isolated DC-to-DC converters
Author
Deschamps, Eduardo ; Barbi, Ivo
Author_Institution
Dept. of Electr. Eng., Regional Univ. of Blumenau, Brazil
Volume
2
fYear
1998
fDate
31 Aug-4 Sep 1998
Firstpage
1024
Abstract
Considering that the designer of high-frequency high-input voltage power supplies does not always find semiconductors capable of sustaining the desired voltage, several topologies have been proposed based on multilevel converters in which only a fraction of the voltage is applied to each switch. This paper compares five different three-level ZVS PWM isolated DC-to-DC converter topologies. Basics concepts of each topology are shown along with their advantages and drawbacks. A comparison involving the size of reactive elements employed, stress of the semiconductors devices, number of semiconductors devices employed, simplicity and efficiency is made and summarised. Experimental results are included, in order to verify the theoretical analysis
Keywords
DC-DC power convertors; PWM power convertors; power semiconductor devices; power supplies to apparatus; switching circuits; efficiency; high-frequency; high-input voltage power supplies; multilevel converters; reactive elements; semiconductors device stress; three-level ZVS-PWM isolated DC-to-DC converters; zero voltage switching; DC-DC power converters; Power semiconductor switches; Power supplies; Pulse width modulation; Pulse width modulation converters; Semiconductor devices; Stress; Switching converters; Topology; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 1998. IECON '98. Proceedings of the 24th Annual Conference of the IEEE
Conference_Location
Aachen
Print_ISBN
0-7803-4503-7
Type
conf
DOI
10.1109/IECON.1998.724235
Filename
724235
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