Title :
Electronic transport studies and photo-detecting properties of indium oxide nanowires
Author :
Lei, Bo ; Li, Chao ; Zhang, Daihua ; Zhou, Chongwu
Author_Institution :
Dept. of Electr. Eng., Southern California Univ., Los Angeles, CA, USA
Abstract :
Single crystalline In2O3 nanowires were synthesized and then utilized to construct field effect transistors (FET) consisting of individual nanowires. These nanowire transistors exhibited nice n-type semiconductor characteristics with well-defined linear and saturation regimes, and on off ratios as high as 104 were observed at room temperature. The temperature-dependence of the conductance revealed thermal emission as the dominating transport mechanism. Furthermore, photo-conducting properties of In2O3 nanowires were also studied. These nanowire transistors showed substantial increase in conductance and also significant shifts in the gate threshold voltage upon exposure to ultraviolet (UV) light.
Keywords :
carrier mobility; field effect transistors; indium compounds; nanowires; photoconductivity; semiconductor materials; 293 to 298 K; FET; In2O3; Si-SiO2; UV light; conductance; electronic transport; field effect transistors; gate threshold voltage shift; indium oxide nanowires; n-type semiconductor; nanowire transistors; photoconducting properties; photodetecting properties; room temperature; single crystalline In2O3 nanowires; temperature dependence; thermal emission; ultraviolet light; Crystallization; FETs; Indium; Nanoscale devices; Nanowires; Scanning electron microscopy; Substrates; Temperature; Threshold voltage; Transmission electron microscopy;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231804
