Second harmonic generation for non-destructive characterization of silicon-on-insulator substrates

This paper reports on a non-destructive, non-invasive characterization technique for monitoring the quality of SOI wafers, based on the second harmonic generation method. The principle of the technique, as well as the experimental set-up, is described. The influence of various parameters (e.g. film and BOX thicknesses, passivation of top surface) is evaluated. The bias applied on the substrate, used as a gate, is found to affect the SHG measurement; it can potentially lead to contactless pseudo-MOSFET configuration.