Title :
Laterally coupled InAs quantum dot distributed feedback lasers at 1.3 μm
Author :
Qiu, Yueming ; Gogna, P.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
InAs quantum dot (QD) distributed feedback lasers at 1.3 μm were fabricated using four stacks of InAs QD´s embedded within strained InGaAs quantum wells as an active region. The lasers show stable single mode continuous wave operation at temperature of 90°C with side mode suppression ratios of above 30 dB, threshold currents as low as 20 mA and output power up to 4 mW.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; quantum dot lasers; semiconductor quantum wells; 1.3 micron; 20 mA; 30 dB; 4 mW; 90 degC; InAs-InGaAs; InGaAs quantum wells; laterally coupled InAs quantum dot distributed feedback lasers; side mode suppression ratios; stable single mode; threshold currents; Distributed feedback devices; Indium gallium arsenide; Laser feedback; Laser modes; Laser stability; Optical coupling; Power lasers; Quantum dot lasers; Quantum well lasers; Temperature;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231806
