Title :
Thickness characterization by capacitance derivative in FDSOI p-i-n gated diodes
Author :
Navarro, C. ; Bawedin, M. ; Andrieu, F. ; Cluzel, J. ; Solaro, Y. ; Fonteneau, P. ; Martinez, F. ; Sagnes, B. ; Cristoloveanu, S.
Author_Institution :
IES, Univ. of Montpellier II, Montpellier, France
Abstract :
The SOI structural characterization is addressed in this paper by using split capacitance measurements on p-i-n gated diodes. The p+ and n+ contacts supply promptly electrons and holes in the body, preventing the diode from the parasitic transient effects that undermine the capacitance measurements in SOI MOSFETs. A novel method to determine the silicon film thickness, based on the capacitance derivative, is presented and validated by experiments and TCAD simulations.
Keywords :
MOSFET; capacitance measurement; p-i-n diodes; silicon-on-insulator; FDSOI p-i-n gated diodes; MOSFET; TCAD simulations; capacitance derivative; electrons; holes; n+ contacts; p+ contacts; parasitic transient effects; split capacitance measurements; structural characterization; thickness characterization; Capacitance; Capacitance measurement; Cathodes; Charge carrier processes; Films; Logic gates; P-i-n diodes; Capacitance; SOI; film thickness; gated diode; inter-gate coupling; p-i-n; split C-V; threshold voltage;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063745
