Title :
Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET
Author :
Nakamura, Shohei ; Kawasaki, Jun ; Kumagai, Yuichi ; Usami, Kimiyoshi
Author_Institution :
Grad. Sch. of Eng. & Sci., Shibaura Inst. of Technol., Tokyo, Japan
Abstract :
This paper aims to measure the minimum energy point of logic circuits using SOTB and a bulk device, and to study the characteristics of logic circuits in SOTB at ultra-low voltage. We designed test chips including 32bit adder and 16bit multiplier circuits in 65nm SOTB and 65nm bulk devices. Measurement results revealed that the minimum energy of SOTB is about 39-49% smaller than that of the bulk The minimum energy voltage of SOTB is 0.25-0.3V, while that of the bulk is 0.35-0.45V. Measurement results also revealed that energy minimum voltage is proportional to the absolute temperature.
Keywords :
MOSFET; logic circuits; logic testing; bulk MOSFET; logic circuits; minimum energy point; multiplier circuits; silicon on thin-box; size 65 nm; test chips; voltage 0.25 V to 0.3 V; voltage 0.35 V to 0.45 V; Adders; Current measurement; Delays; Energy measurement; Equations; Temperature measurement; Voltage measurement; Energy minimum point; Silicon-on-Thin-BOX MOSFET; Ultra-low voltage;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063746
