Title :
Performance estimation of molecular crossbar architecture considering capacitive and inductive coupling between interconnects
Author :
Raychowdhury, Arijit ; Roy, Kaushik
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Scaling silicon MOSFETs beyond the 10 nm regime has posed challenges to device and circuit engineers. Research has begun in the earnest to find possible replacements for silicon. Molecular devices are being extensively studied and their electrical characteristics are being measured. Crossbar architecture in such nanoscale devices has lately gained tremendous popularity. This paper examines the issue of interconnect parasitics in such molecular crossbar architectures.
Keywords :
capacitance; electric resistance; integrated circuit interconnections; molecular electronics; nanotechnology; semiconductor device models; capacitive coupling; electrical properties; inductive coupling; interconnect parasitics; molecular crossbar architecture; molecular devices; nanoscale devices; performance estimation; scaling silicon MOSFET; Computer architecture; Coupling circuits; Inductance; Integrated circuit interconnections; Logic arrays; Read only memory; Routing; Silicon; Switches; Wires;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231814
