Field emitter material investigations for vacuum field effect transistors

Critical needs in modern high technology circuitry have brought about renewed interest in vacuum electronics. New structures such as micro vacuum electronics may possibly be the only viable solution for some of the challenges faced by electronic circuit designers. A specific need is an ultra high-speed transistor capable of operating in environments that would be overly hostile to semiconductors. A device is thus required that can operate at relatively high temperatures and be virtually insensitive to radiation. Such devices would have immediate applications in satellites, deep space probes, extraterrestrial exploration, and as sensors for bore holes, fission reactors, etc. One of the most important aspects of developing such a device is finding an extremely robust, low work function electron emitter.