Title :
Toward understanding of donor-traps-related dispersion phenomena on normally-ON AlGaN/GaN HEMT through transient simulations
Author :
Strangio, S. ; Magnone, P. ; Crupi, F. ; Fiegna, C. ; Pace, C. ; Iannaccone, G. ; Heiman, A. ; Shamir, D.
Author_Institution :
DIMES, Univ. della Calabria, Arcavacata di Rende, Italy
Abstract :
In this paper we report the results of a TCAD simulation study performed on AlGaN/GaN High Electron Mobility Transistor (HEMT). The effects of interface states, leading to drain current dispersion phenomena as a result of fast sweep of the drain voltage, are investigated in transient simulations. The virtual drain model is introduced to explain the drain current overshoot due to drain voltage pulsing.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; technology CAD (electronics); wide band gap semiconductors; AlGaN-GaN; TCAD simulation study; donor-traps-related dispersion phenomena; drain current dispersion phenomena; drain current overshoot; drain voltage pulsing; drain voltage sweep; high electron mobility transistor; normally-ON HEMT; virtual drain model; Aluminum gallium nitride; Electric potential; Electron traps; Gallium nitride; HEMTs; Logic gates; Silicon compounds; AlGaN/GaN; Donor Traps; HEMT; TCAD;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063752
