Title :
P-type trigate nano wires: Impact of nano wire thickness and Si0.7Ge0.3 source-drain epitaxy
Author :
Gaben, L. ; Barraud, S. ; Samson, M.-P. ; Hartmann, J.-M. ; Vizioz, C. ; Aussenac, F. ; Allain, F. ; Montray, S. ; Boeuf, F. ; Skotnicki, T. ; Balestra, F. ; Vinet, M.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
The impact of nanowire (NW) height and Si0.7Ge0.3:B source-drain (S/D) on the performance of p-type trigate NW is presented. We show that an increase in Si NW height from 14.5nm to 24nm generates up to +30% enhancement in hole effective mobility for a 13nm NW width. Effectiveness of Sio.7Geo.3:B S/D is then discussed for a wide range of NW width (13nm<;W<;218nm) and height (11nm<;HNw<;24nm). We also highlight short-channel performance of trigate NW with Si0.7Ge0.3:B S/D: +86% Ion improvement is observed for HNw=11nm against only +58% for HNw=24nm.
Keywords :
Ge-Si alloys; boron; nanowires; transistors; S-D epitaxy; Si0.7Ge0.3:B; p-type trigate NW; p-type trigate nanowire transistor; short-channel performance; size 11 nm; size 13 nm; size 14.5 nm to 24 nm; source-drain epitaxy; Epitaxial growth; Logic gates; MOSFET; Nanowires; Silicon; Silicon germanium; Channel Strain; Electrostatics; Fin-FET; Hole Mobility; MOSFET; Nanowire; SiGe Some Brain; Silicon; Trigate;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063761
