Prospects of SOI technology evolution

Today in Russia there are good prospects for creating The SOI Program on producing custom integrated chips on SOI structures basis, which provide complete dialectical isolation of IC elements. SOF and SI-SOPS structures should become the basis for The SOI Program realization. The quality of silicon layers of SOF and SI-SOPS structures makes possible in producing high-quality chips on their basis by CMOS and BCMOS technologies with very high operational speed and provides high radiating stability of IC. The economic calculations prove high profitability of using SOF and SI-SOPS structures when manufacturing integrated chips. SOF structures can become the basis for manufacturing the T-D chips.