Leakage current and breakdown of GaN-on-Silicon vertical structures

Author

Cornigli, D. ; Monti, F. ; Reggiani, S. ; Gnani, E. ; Gnudi, A. ; Baccarani, G.

Author_Institution

ARCES & DEI, Univ. of Bologna, Bologna, Italy

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

25

Lastpage

28

Abstract

A TCAD-based approach has been used to investigate the leakage current and breakdown regime of vertical GaN/AlGaN/Si structures at different ambient temperatures. A good agreement with experimental data has been obtained by implementing both trap-assisted and Poole-Frenkel conduction mechanisms into the buffer layers. The latter mechanisms have been proven to anticipate the onset of breakdown at high temperatures.

Keywords

III-V semiconductors; aluminium; elemental semiconductors; gallium compounds; leakage currents; semiconductor devices; silicon; technology CAD (electronics); wide band gap semiconductors; GaN-AlGaN; Leakage Current; Poole-Frenkel conduction mechanism; Si; TCAD-based approach; ambient temperatures; breakdown regime; buffer layers; gallium nitride-on-silicon vertical structures; trap-assisted conduction mechanism; Aluminum gallium nitride; Electric breakdown; Gallium nitride; Leakage currents; Silicon; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on

Conference_Location

Bologna

Type

conf

DOI

10.1109/ULIS.2015.7063764

Filename

7063764