• DocumentCode
    2075337
  • Title

    Visible photoluminescence from Si nanocrystals fabricated in SiO2 films after annealing under hydrostatic pressure

  • Author

    Zhuravlev, K.S. ; Tyschenko, Ida E. ; Vandyshev, Evgeny N. ; Bulytova, Natalya V. ; Misiuk, Andrzej ; Rebohle, Lars ; Skorupa, Wolfgang

  • Author_Institution
    Inst. of Semicond. Phys., Novosibirsk, Russia
  • Volume
    1
  • fYear
    2002
  • fDate
    1-5 July 2002
  • Abstract
    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO2 films has been studied. For the films implanted with Si+ ions to total doze of 4.8 · 1016 cm-2 a high temperature annealing (Ta=1 000°C) under high hydrostatic pressure (12 Kbar) causes a "blue" shift and increase intensity of the photoluminescence band attributed to silicon nanocrystals.
  • Keywords
    IV-VI semiconductors; annealing; ion implantation; nanostructured materials; nanotechnology; photoluminescence; silicon; silicon compounds; 1000 C; 12 kbar; SiO2:Si; high temperature annealing; hydrostatic pressure; silicon nanocrystals; visible photoluminescence; Annealing; Argon; High definition video; Nanocrystals; Optical pulses; Photoluminescence; Physics; Semiconductor films; Silicon; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
  • Print_ISBN
    5-7782-0380-2
  • Type

    conf

  • DOI
    10.1109/SREDM.2002.1024299
  • Filename
    1024299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2075337