DocumentCode :
2075337
Title :
Visible photoluminescence from Si nanocrystals fabricated in SiO2 films after annealing under hydrostatic pressure
Author :
Zhuravlev, K.S. ; Tyschenko, Ida E. ; Vandyshev, Evgeny N. ; Bulytova, Natalya V. ; Misiuk, Andrzej ; Rebohle, Lars ; Skorupa, Wolfgang
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
Volume :
1
fYear :
2002
fDate :
1-5 July 2002
Abstract :
The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO2 films has been studied. For the films implanted with Si+ ions to total doze of 4.8 · 1016 cm-2 a high temperature annealing (Ta=1 000°C) under high hydrostatic pressure (12 Kbar) causes a "blue" shift and increase intensity of the photoluminescence band attributed to silicon nanocrystals.
Keywords :
IV-VI semiconductors; annealing; ion implantation; nanostructured materials; nanotechnology; photoluminescence; silicon; silicon compounds; 1000 C; 12 kbar; SiO2:Si; high temperature annealing; hydrostatic pressure; silicon nanocrystals; visible photoluminescence; Annealing; Argon; High definition video; Nanocrystals; Optical pulses; Photoluminescence; Physics; Semiconductor films; Silicon; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN :
5-7782-0380-2
Type :
conf
DOI :
10.1109/SREDM.2002.1024299
Filename :
1024299
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2075337
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