Title :
BIMOS transistor in thin silicon film and new solutions for ESD protection in FDSOI UTBB CMOS technology
Author :
Galy, Ph ; Athanasiou, S. ; Cristoloveanu, S.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
The purpose of this study is to evaluate the ESD protection behavior using BIMOS transistors integrated in ultrathin silicon film for 28 nm FDSOI UTBB high-k metal gate technology. Using as a reference our measurements in hybrid bulk structures we extend the BIMOS design towards the ultrathin silicon film. Evaluations are done based on 3D TCAD simulation with standard physical models using ACS method and quasi-static DC stress (AVS method).
Keywords :
BIMOS integrated circuits; MOSFET; electrostatic discharge; semiconductor device models; silicon-on-insulator; 3D TCAD simulation; ACS method; BIMOS transistor; ESD protection; FDSOI UTBB CMOS technology; high-k metal gate technology; hybrid bulk structures; quasistatic DC stress; size 28 nm; ultrathin silicon film; BiCMOS integrated circuits; Electrostatic discharges; Films; Logic gates; Silicon; Stress; Transistors; BIMOS transistor; CMOS; ESD protection; FDSOI;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063765
