Title :
A new latch-free LIGBT on SOI
Author :
Olsson, J. ; Vestling, L. ; Eklund, K.-H.
Author_Institution :
Angstrom Lab., Uppsala Univ., Uppsala, Sweden
Abstract :
A new latch-free LIGBT on SOI is presented. The new device combines advantages from both LDMOS as well as LIGBT technologies; high breakdown voltage, high drive current density, low control voltages, at the same time eliminating latch-up problems. Breakdown voltage of over 200 V, on-state current density over 3 A/mm and latch-free operation is demonstrated.
Keywords :
MOS integrated circuits; electric breakdown; insulated gate bipolar transistors; silicon-on-insulator; LDMOS; SOI; high breakdown voltage; high drive current density; latch-free LIGBT; low control voltages; Anodes; Current density; Logic gates; MOSFET; Performance evaluation; Voltage measurement;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063766
