Title :
High performance PIN Ge photodetector and Si optical modulator with MOS junction for photonics-electronics convergence system
Author :
Fujikata, J. ; Noguchi, M. ; Miura, Masaki ; Takahashi, Masaharu ; Takahashi, Satoshi ; Horikawa, Tsuyoshi ; Urino, Yutaka ; Nakamura, T. ; Arakawa, Yasuhiko
Author_Institution :
Inst. for Photonics-Electron. Convergence Syst. Technol. (PECST), Tsukuba, Japan
Abstract :
We report on a high speed silicon-waveguide-integrated PIN Ge photodetector of 45 GHz bandwidth, and a high efficiency of 0.3 V·cm silicon optical modulator with a metal-oxide-semiconductor (MOS) junction by applying the low optical loss and high conductivity poly-silicon gate. These OE/EO devices enable low drive voltage of around 1V, which would contribute to a high density optical interposer of the future photonics-electronics convergence system.
Keywords :
germanium; optical losses; optical modulation; optical waveguides; p-i-n photodiodes; photodetectors; silicon; Ge; MOS junction; OE/EO devices; Si; bandwidth 45 GHz; drive voltage; high conductivity poly-silicon gate; high speed silicon-waveguide-integrated PIN germanium photodetector; low optical loss; metal-oxide-semiconductor junction; optical interposer; photonics-electronics convergence system; silicon optical modulator; High-speed optical techniques; Optical device fabrication; Optical imaging; Optical modulation; Optical polarization; Optical reflection; Silicon;
Conference_Titel :
Design Automation Conference (ASP-DAC), 2013 18th Asia and South Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4673-3029-9
DOI :
10.1109/ASPDAC.2013.6509674
