DocumentCode
2075399
Title
70 GHz Planar Integrated Oscillator on Semiinsulating GaAs
Author
Bogner, W ; Freyer, J.
Author_Institution
Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Technical University Munich, Arcisstr. 21, D-8000 Mÿnchen 2, FRG
Volume
1
fYear
1990
fDate
9-13 Sept. 1990
Firstpage
593
Lastpage
598
Abstract
Planar oscillators with ¿/4 rectangular microstrip-line resonators have been developed for operation with cw Impatt diodes at V-band frequencies. The impedance matching of the capacitive output coupling gap has been investigated for gap widths from 10 to 50 ¿m. Using GaAs Impatt diodes a maximum output power of 25 mW has been achieved at frequencies of about 70 GHz. The oscillation frequency remained stable over the whole bias current range and no frequency jumps have been recognized. The maximum efficiency was between 3.5 % and 5.2 %.
Keywords
Etching; Frequency; Gallium arsenide; Heat sinks; Impedance; Microstrip resonators; Oscillators; Power generation; Semiconductor diodes; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1990. 20th European
Conference_Location
Budapest, Hungary
Type
conf
DOI
10.1109/EUMA.1990.336107
Filename
4136064
Link To Document