DocumentCode :
2075399
Title :
70 GHz Planar Integrated Oscillator on Semiinsulating GaAs
Author :
Bogner, W ; Freyer, J.
Author_Institution :
Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Technical University Munich, Arcisstr. 21, D-8000 Mÿnchen 2, FRG
Volume :
1
fYear :
1990
fDate :
9-13 Sept. 1990
Firstpage :
593
Lastpage :
598
Abstract :
Planar oscillators with ¿/4 rectangular microstrip-line resonators have been developed for operation with cw Impatt diodes at V-band frequencies. The impedance matching of the capacitive output coupling gap has been investigated for gap widths from 10 to 50 ¿m. Using GaAs Impatt diodes a maximum output power of 25 mW has been achieved at frequencies of about 70 GHz. The oscillation frequency remained stable over the whole bias current range and no frequency jumps have been recognized. The maximum efficiency was between 3.5 % and 5.2 %.
Keywords :
Etching; Frequency; Gallium arsenide; Heat sinks; Impedance; Microstrip resonators; Oscillators; Power generation; Semiconductor diodes; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1990. 20th European
Conference_Location :
Budapest, Hungary
Type :
conf
DOI :
10.1109/EUMA.1990.336107
Filename :
4136064
Link To Document :
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