Title :
Self-heating in 28 nm bulk and FDSOI
Author :
Makovejev, S. ; Planes, N. ; Haond, M. ; Flandre, D. ; Raskin, J.-P. ; Kilchytska, V.
Author_Institution :
ICTEAM Inst., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
In this work self-heating and its effect on device parameters are compared in 28 nm technology bulk and FDSOI MOS devices. It is found that the thermal resistance is ~3.4 times higher and the temperature rise is ~2.5 times higher in FDSOI than in bulk However, in spite of stronger self-heating, FDSOI devices outperform bulk over a wide frequency range. Moreover, device parameters degradation with temperature is attenuated in FDSOI transistors.
Keywords :
MIS devices; MOSFET; nanotechnology; silicon-on-insulator; thermal resistance; FDSOI MOS devices; FDSOI transistors; Si; device parameters degradation; nanotechnology; self-heating; size 28 nm; thermal resistance; Gain; Heating; Logic gates; MOSFET; Resistance; Silicon; Temperature measurement; 28 nm; FDSOI; bulk; self-heating;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063768
