DocumentCode
2075409
Title
Peculiarities of 3D nanoisland formation on vicinal surfaces during MBE process (simulation)
Author
Brunev, D.V. ; Karpov, Alexander N. ; Sisenko, TatianaYu ; Shwartz, Nataliya L. ; Yanovitskaja, Zoya Sh
Author_Institution
Inst. of Semicond. Phys., Novosibirsk, Russia
Volume
1
fYear
2002
fDate
1-5 July 2002
Abstract
Using Monte Carlo simulation atomic interlayer diffusion influence on the morphology of vicinal surfaces during MBE was investigated. Mechanism of 3D island formation on the surfaces with steps and echelons of steps was suggested. It was revealed, that for heterosystems with predominating atomic transport from island edge to the upper layers, 3D islands are formed on vicinal surfaces with very narrow terraces.
Keywords
Monte Carlo methods; interface phenomena; molecular beam epitaxial growth; surface diffusion; surface morphology; 3D nanoisland formation; MBE process simulation; Monte Carlo simulation; atomic interlayer diffusion; atomic transport; heterosystems; vicinal surfaces morphology; Atomic layer deposition; Atomic measurements; Capacitive sensors; Gold; Lattices; Physics; Stress; Substrates; Surface morphology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN
5-7782-0380-2
Type
conf
DOI
10.1109/SREDM.2002.1024300
Filename
1024300
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