The 1/F Noise Performance of GaAs Planar Doped Barrier Mixer Diodes

The paper details the 1/f noise characterisation of a range of planar doped barrier diodes. Detailed results are presented comparing the performance with conventional Si and GaAs Schottky diodes. The paper also describes the methods employed to make the 1/f noise assessment and draws the conclusion that PDB diodes offer up to two orders of magnitude lower corner frequencies (<10 kHz) and significantly lower mixer floor levels (<6dB) than equivalent Si and GaAs Schottky diodes.