DocumentCode
2075444
Title
Cathode Contact Effects in Millimeter-Wave GaAs Transferred Electron Devices
Author
Spooner, H. ; Howes, M.J. ; Snowden, C.M.
Author_Institution
Microwave Solid State Group, Department of Electronic and Electrical Engineering, University of Leeds, LEEDS, LS2 9JT.
Volume
1
fYear
1990
fDate
9-13 Sept. 1990
Firstpage
611
Lastpage
616
Abstract
Millimetre-wave transferred electron devices have been fabricated with a range of cathode contacts from a Schottky contact to an ohmic contact. DC measurements have shown that the degree of negative differential resistance and the ratio of forward and reverse bias threshold currents can be related directly to the state of the cathode contact. Corresponding rf measurements have shown similar trends in efficiency and `turn-on´ performance, suggesting different modes of operation. A novel computer simulation has been developed to investigate these effects.
Keywords
Cathodes; Contact resistance; Current measurement; Electrical resistance measurement; Gallium arsenide; Gunn devices; Millimeter wave measurements; Ohmic contacts; Schottky barriers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1990. 20th European
Conference_Location
Budapest, Hungary
Type
conf
DOI
10.1109/EUMA.1990.336110
Filename
4136067
Link To Document