DocumentCode :
2075471
Title :
High-density integration of functional modules using monolithic 3D-IC technology
Author :
Panth, Shreepad ; Samadi, Kambiz ; Yang Du ; Sung Kyu Lim
Author_Institution :
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2013
fDate :
22-25 Jan. 2013
Firstpage :
681
Lastpage :
686
Abstract :
Three dimensional integrated circuits (3D-ICs) have emerged as a promising solution to continue device scaling. They can be realized using Through Silicon Vias (TSVs), or monolithic integration using Monolithic Inter-tier vias (MIVs), an emerging alternative that provides much higher via densities. In this paper, we provide a framework for floorplanning existing 2D IP blocks into 3D-ICs using MIVs. We take the floorplanning solution all the way through place-and-route and report post-layout metrics for area, wirelength, timing, and power consumption. Results show that the wirelength of TSV-based 3D designs outperform 2D designs by upto 14% in large-scale circuits only. MIV-based 3D designs, however, offer an average wirelength improvement of 33% for a wide range of benchmark circuits. We also show that while TSV-based 3D cannot improve the performance and power unless the TSV capacitance is reduced, MIV-based 3D offers significant reduction of upto 33% in the longest path delay and 35% in the inter-block net power.
Keywords :
circuit layout; three-dimensional integrated circuits; 2D IP block; MIV-based 3D; TSV capacitance; TSV-based 3D design; device scaling; floorplanning; functional module; high-density integration; interblock net power; large-scale circuit; monolithic 3D-IC technology; monolithic intertier vias; place-and-route; power consumption; three dimensional integrated circuit; through silicon vias; wirelength improvement; Hardware design languages; Metals; Planning; System-on-chip; Three-dimensional displays; Through-silicon vias; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference (ASP-DAC), 2013 18th Asia and South Pacific
Conference_Location :
Yokohama
ISSN :
2153-6961
Print_ISBN :
978-1-4673-3029-9
Type :
conf
DOI :
10.1109/ASPDAC.2013.6509679
Filename :
6509679
Link To Document :
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