Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors

We study the impact of hot-carrier degradation (HCD) on the performance of graphene field-effect transistors (GFETs) for different polarities of HC and bias stress. Our results show that the impact of HCD consists in a change of both charged defect density and carrier mobility. At the same time, the mobility degradation agrees with an attractive/repulsive scattering asymmetry and can be understood based on the analysis of the defect density variation.