Relevance of the physics of off-plane transport through 2D materials on the design of vertical transistors

We propose a theoretical study of vertical transport through graphene and two-dimensional materials, using simulations based on density functional theory and on pseudo atomistic Hamiltonians. We highlight the importance of interfaces and of band structure matching between adjacent layers, showing that graphene can offer a significant barrier to electron tunneling. We also show that the energy dependence of the transmission probability of other semiconducting two-dimensional materials is strongly affected by the details of the energy dispersion relations of the barrier and of the emitter and collector regions.