Title :
Tri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors
Author :
Djara, V. ; Czornomaz, L. ; Daix, N. ; Caimi, D. ; Deshpande, V. ; Uccelli, E. ; Sousa, M. ; Marchiori, C. ; Fompeyrine, J.
Author_Institution :
IBM Res. GmbH, Rüschlikon, Switzerland
Abstract :
A tri-gate In0.53Ga0.47As-on-insulator (InGaAs-OI) junctionless field-effect transistor (JLFET) architecture is demonstrated. The devices feature a 20-nm-thick n-In0.53Ga0.47As channel doped to 1018 /cm3 obtained by direct wafer bonding and a 3.5-nm-thick Al2O3 gate dielectric deposited by plasma-enhanced atomic layer deposition (PE-ALD). The impact of the fin width (Wfin) and gate length (Lg) scaling at fixed channel doping (Nd) and equivalent oxide thickness (EOT) on the device performance is discussed and benchmarked.
Keywords :
III-V semiconductors; aluminium compounds; atomic layer deposition; field effect transistors; gallium arsenide; indium compounds; wafer bonding; Al2O3; EOT; InGaAs; JLFET; PE-ALD; direct wafer bonding; equivalent oxide thickness; fin width scaling; fixed channel doping; gate dielectric deposition; gate length scaling; junctionless field effect transistors; plasma-enhanced atomic layer deposition; size 20 nm; size 3.5 nm; trigate InGaAs-on-insulator; Aluminum oxide; Dielectrics; Indium gallium arsenide; Logic gates; MOSFET; Performance evaluation; Wafer bonding; Direct wafer bonding; Field-effect transistor; High-A dielectrics; InGaAs-OI; Junctionless; Multigate;
Conference_Titel :
Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on
Conference_Location :
Bologna
DOI :
10.1109/ULIS.2015.7063782
